Molecular studies have revealed that the LDA and GGA give a
reasonable description of the exchange-correlation potential
in regions close to a molecule, but break down with increasing
distance [37]. This is evident since the
true potential decays asymptotically with an inverse distance
behaviour, whereas the LDA and GGA potentials behave exponentially at
large distance from a finite charge distribution. As a consequence,
conventional functionals such as PW
lead to over-diffuse electron
densities. This also has an effect on the occupied-unoccupied eigenvalue
differences in atoms and molecules [128], which are
greatly underestimated.
The charge density difference of Si between HCTH and PW
has been
computed to investigate whether HCTH provides any improvement regarding
the diffuse nature of the density. Fig. 3.5(a)
shows the crystal lattice of Si, and the colour contours in
Figs. 3.5(b) and (c) display the positive difference
between the densities calculated as, PW91 - HCTH and HCTH - PW91
respectively. The density differences are superimposed onto the Si
crystal lattice in order to illustrate the regions where charge has
been transferred. It is clear from these plots that the HCTH density is
greatest near the atomic sites and bonds, whereas the PW
density is
higher in the interstitial regions of the lattice. The superposition
of Figs. 3.5(b) and (c) given in 3.5(d)
clearly shows the transfer of density.
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If the over-diffuse nature of the density in the molecular environment
extends into the solid state, then the above results indicate that HCTH
yields a more accurate description of the exchange-correlation potential
than PW
. This would also explain why HCTH band gaps are generally
more accurate than those obtained with PW
.